Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-29
2008-12-02
Richards, N. Drew (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S135000, C438S138000, C438S139000, C438S243000, C438S270000, C257SE21648
Reexamination Certificate
active
07459365
ABSTRACT:
The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.
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Bell et al., “Porous Silicon as a Sacrificial Material,” Journal of Micromechanics and Microengineering, Jun. 1996, pp. 361-369.
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Gösele et al., “Porous Silicon Etch-Release layer,” from Science and Technology of Semiconductor Wafer Bonding (not yet published but found on the web at http://www.duke.edu/web/wbl/bondbk.html). 2 pages.
Hirler Franz
Mauder Anton
Pfirsch Frank
Pippan Manfred
Rüb Michael
Infineon Technologies Austria AG
Lee Kyoung
Maginot Moore & Beck
Richards N. Drew
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