Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-10
2005-05-10
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S604000, C257S012000, C257S013000, C257S014000, C257S015000, C257S016000, C257S017000, C257S022000
Reexamination Certificate
active
06890809
ABSTRACT:
A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.
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Dmitriev Vladimir A.
Helava Heikki I.
Karpov Sergey
Tsvetkov Denis
Usikov Alexander
Berry Renee R.
Nelms David
Patent Law Office of David G. Beck
Technologies and Deviles International, Inc.
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