4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With pretreatment or preparation of a base

Vladimir A. Dmitriev

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Apparatus for epitaxially growing semiconductor device...

Coating apparatus – Gas or vapor deposition – Multizone chamber
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Bulk GaN and ALGaN single crystals

Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate

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HVPE apparatus and methods for growth of indium containing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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III-V compound semiconductor device with an...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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III-V compounds semiconductor device with an...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
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Profile ID: LFUS-PAI-P-1165488

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