Method for fabricating a MOSFET device, for an SRAM cell, using

Details Method for fabricating a MOSFET device, for an SRAM cell, using Method for fabricating a MOSFET device, for an SRAM cell, using

1997-01-15

1998-12-01

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438647, H01L 218244

Patent

active

058438157

ABSTRACT:
A process for fabricating a MOSFET device, for a triple polysilicon SRAM process, using a self-aligned, halo implant, (SAC halo implant), region, used to improve MOSFET performance and yield, has been developed. This process features implanting the SAC halo region, into a region of the semiconductor substrate, already exposed and prepared for a self-aligned contact, (SAC), structure, therefore requiring no additional photolithographic procedures.

REFERENCES:
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5521113 (1996-05-01), Hsue et al.
patent: 5652174 (1997-07-01), Wuu et al.
patent: 5654240 (1997-08-01), Lee et al.

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