Method for fabricating a lateral RF MOS device with an non-diffu

Details Method for fabricating a lateral RF MOS device with an non-diffu Method for fabricating a lateral RF MOS device with an non-diffu

1998-05-04

2000-04-11

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438306, H01L 21336

Patent

active

060487720

ABSTRACT:
Methods of fabrication of a lateral RF MOS device having a non-diffusion connection between source and substrate are disclosed. In one embodiment, the lateral RF MOS device has an interdigitated silicided gate structure. In another embodiment, the lateral RF MOS device has a quasi-mesh silicided gate structure.

REFERENCES:
patent: H986 (1991-11-01), Codella et al.
patent: 4890146 (1989-12-01), Williams et al.
patent: 5371394 (1994-12-01), Ma et al.
patent: 5514608 (1996-05-01), Williams et al.
patent: 5541132 (1996-07-01), Davies et al.
Baliga, "Trends in Power Semiconductor Devices," IEEE Transactions ofn Electron Devices, vol. 43, No. 10, Oct. 1996, ppg 1717-1731.
U.S. Statutory Inventor Registration H986, Lodella et al, published Nov. 5, 1991.

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