Method for fabricating a gate structure

Details Method for fabricating a gate structure Method for fabricating a gate structure

2010-04-09

2011-11-01

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S704000, C438S706000, C438S715000, C438S785000, C438S508000

Reexamination Certificate

active

08048733

ABSTRACT:
An method of fabricating the gate structure comprises: sequentially depositing and patterning a dummy oxide layer and a dummy gate electrode layer on a substrate; surrounding the dummy oxide layer and the dummy gate electrode layer with a nitrogen-containing dielectric layer and an interlayer dielectric layer; removing the dummy gate electrode layer; removing the dummy oxide layer by exposing a surface of the dummy oxide layer to a vapor mixture comprising NH3 and a fluorine-containing compound at a first temperature; heating the substrate to a second temperature to form an opening in the nitrogen-containing dielectric layer; depositing a gate dielectric; and depositing a gate electrode.

REFERENCES:
patent: 6284146 (2001-09-01), Kim et al.
patent: 6440808 (2002-08-01), Boyd et al.
patent: 2008/0265322 (2008-10-01), Lin et al.
patent: 2010/0124818 (2010-05-01), Lee et al.
patent: 2010/0255654 (2010-10-01), Lin et al.

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