Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-02-15
2005-02-15
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S695000
Reexamination Certificate
active
06855643
ABSTRACT:
A method for fabricating a gate structure having a polysilicon electrode using an oxygen-free chemistry to etch the polysilicon. In one embodiment, the chemistry further includes nitrogen.
REFERENCES:
patent: 5071714 (1991-12-01), Rodbell et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5188979 (1993-02-01), Filipiak
patent: 5200028 (1993-04-01), Tatsumi
patent: 5337207 (1994-08-01), Jones et al.
patent: 5356833 (1994-10-01), Maniar et al.
patent: 5391244 (1995-02-01), Kadomura
patent: 5674782 (1997-10-01), Lee et al.
patent: 6184072 (2001-02-01), Kaushik et al.
patent: 6204141 (2001-03-01), Lou
patent: 6270568 (2001-08-01), Droopad et al.
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6300202 (2001-10-01), Hobbs et al.
patent: 6319730 (2001-11-01), Ramdani et al.
patent: 6323143 (2001-11-01), Yu
patent: 6326261 (2001-12-01), Tsang et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 0151072 (2001-07-01), None
patent: 0197257 (2001-12-01), None
Visokay, et al. “Application of HfSiON as a gate dielectric material,” Applied Physics Letters, 8(17), 3183-3185, 2002.
Yee, et al., “Reactive radio frequency sputter deposition of higher nitrides of titanium, zirconium and hafnium,” J. Vac. Sci. Technol A 4(3) May/Jun. 1986, 381-387.
Kumar Ajay
Nallan Padmapani C.
Bach Joseph
Moser, Patterson & Sheridan L.L.P.
Nhu David
LandOfFree
Method for fabricating a gate structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a gate structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a gate structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3470152