Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-02-26
2010-12-14
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21409
Reexamination Certificate
active
07851315
ABSTRACT:
A field effect transistor and a method of fabricating the field effect transistor. The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation; a source and a drain formed in the body and on opposite sides of a channel formed in the body; and a gate dielectric layer between the body and an electrically conductive gate electrode, a bottom surface of the gate dielectric layer in direct physical contact with a top surface of the body and a bottom surface the gate electrode in direct physical contact with a top surface of the gate dielectric layer, the gate electrode having a first region having a first thickness and a second region having a second thickness, the first region extending along the top surface of the gate dielectric layer over the channel region, the second thickness greater than the first thickness.
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Notice of Allowance (Mail Date Mar. 6, 2009) for U.S. Appl. No. 12/037,121, filed Feb. 26, 2008; Confirmation No. 3272.
Anderson Brent Alan
Bryant Andres
Clark, Jr. William F.
Nowak Edward Joseph
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
Smith Matthew S
Swanson Walter H
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