Method for fabricating a DRAM cell capacitor including forming a

Details Method for fabricating a DRAM cell capacitor including forming a Method for fabricating a DRAM cell capacitor including forming a

1999-03-30

2000-06-27

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 257306, H01L 218242

Patent

active

060806222

ABSTRACT:
Disclosed is an improved method for fabricating a DRAM cell capacitor. The method includes the steps of depositing a first insulating layer over a semiconductor substrate having a field effect transistor, etching the first insulating layer and forming a contact hole therein to one of two source/drain areas of the field effect transistor, filling the contact hole with a first conductive layer thereby to form a contact plug, depositing a thin second conductive layer and a relatively thick second insulating layer on the contact plug and the semiconductor substrate, etching the second insulating layer using a capacitor mask and forming an opening in the second insulating layer to the second conductive layer at a position opposite to underlying the contact plug, filling the opening with a third conductive layer thereby to form a storage node pattern, removing the second insulating layer outside of the storage node pattern, etching the second conductive layer until the first insulating layer outside of the storage node pattern is exposed thereby to form a storage node.

REFERENCES:
patent: 5032233 (1991-07-01), Yu et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5217913 (1993-06-01), Watabe et al.
patent: 5331116 (1994-07-01), Haslam et al.
patent: 5449644 (1995-09-01), Hong et al.
patent: 5490901 (1996-02-01), Kim
patent: 5498889 (1996-03-01), Hayden
patent: 5529946 (1996-06-01), Hong
patent: 5534463 (1996-07-01), Lee et al.
patent: 5543357 (1996-08-01), Yamada et al.
patent: 5593920 (1997-01-01), Haslam et al.
patent: 5698902 (1997-12-01), Uehara et al.
patent: 5710073 (1998-01-01), Jeng et al.
patent: 5834847 (1998-11-01), Jung et al.
patent: 5877062 (1999-03-01), Horii
patent: 5879982 (1999-03-01), Park et al.
patent: 5989954 (1999-11-01), Lee et al.
patent: 5994181 (1999-11-01), Hsieh et al.
U.S. application No. 09/224,741, Lee et al., filed Dec. 31, 1998.

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