Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-02-08
1999-01-05
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438397, H01L 218242, H01L 2120
Patent
active
058562206
ABSTRACT:
A method and structure is described for a DRAM cell having a double wall tub shaped capacitor. The structure of the capacitor has two embodiments: a double wall tub shaped capacitor and a double wall cup shaped capacitor. In a first embodiment for the tub shaped capacitor, the method comprises using two masks to form a tub shaped hole partial through an insulating layer and a concentric contact hole over the source. A polysilicon layer is formed over the insulating layer. Oxide spacers are formed on the sidewalls of the tub shaped hole. The polysilicon layer is patterned to separate adjacent electrodes. Next, a polysilicon inner wall is formed on the spacer sidewalls. The oxide spacers are then removed. The dielectric and top electrode are formed next thus completing the double wall tub shaped capacitor. The second embodiment for forming the cup shaped capacitor comprises forming an insulating layer the substrate surface and forming a photoresist layer with an opening over a source region. The insulating layer is isotropically etched through the opening to form a cup shaped cavity. Next, the insulating layer is anisotropically etch through the opening to form a contact opening exposing the source. A polysilicon layer is formed filling the contact hole and the cup shaped cavity. Oxide and polysilicon spacers are sequentially formed on the sidewalls of the cylindrical hole. The insulating layer and oxide spacers are then removed. A capacitor dielectric and a top electrode are formed over the storage electrode to complete the double wall cup shaped capacitor.
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Liang Mong-Song
Wang Chen-Jong
Ackerman Stephen B.
Chaudhari Chandra
Saile George O.
Stoffel William J.
Taiwan Semiconductor Manufacturing Company , Ltd.
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