Method for fabricating a deep trench in a substrate

Details Method for fabricating a deep trench in a substrate Method for fabricating a deep trench in a substrate

2008-02-22

2010-02-23

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S386000, C438S637000, C438S680000, C438S243000, C438S239000

Reexamination Certificate

active

07666792

ABSTRACT:
The invention provides a method for forming a deep trench in a substrate. A sacrificial layer and a liner layer are first used to define the deep trench pattern. The sacrificial layer is then replaced with a silicon glass layer. A thick mask layer includes the silicon glass layer, the liner layer and a silicon nitride layer is formed on the substrate. Through an opening of the thick mask layer, a deep trench is etched into the substrate.

REFERENCES:
patent: 6544855 (2003-04-01), Tews et al.

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