Method for fabricating a crown-shaped capacitor

Details Method for fabricating a crown-shaped capacitor Method for fabricating a crown-shaped capacitor

1998-07-07

1999-12-21

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

06004845&

ABSTRACT:
A method for fabricating crown-shaped a capacitor is provided. The method is comprised of the following steps. First, a dielectric layer is formed on a substrate having a pre-formed field effect transistor, then a contact hole which exposes one of the source/drain regions of the field effect transistor is defined and formed. Then a first conductive layer is formed in the contact hole and on the dielectric layer, a crown-shaped photoresist layer is formed by employing a mask comprising a transmission layer, a partial transmission layer, and a non-transmission layer. Next, the pattern on the photoresist layer is transferred onto the first conductive layer to form a crown-shaped conductive layer. Then, a dielectric film is formed on the top of the crown-shaped conductive layer, and a second conductive layer on the top of the dielectric film.

REFERENCES:
patent: 5700731 (1997-12-01), Lin et al.
patent: 5821013 (1998-10-01), Miller et al.
patent: 5902126 (1999-05-01), Hong et al.
patent: 5914202 (1999-06-01), Nguyen et al.
patent: 5946571 (1999-08-01), Hsue et al.

Affiliated with

Also associated with

Rating

Method for fabricating a crown-shaped capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a crown-shaped capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a crown-shaped capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504425