Method for fabricating a capactior in a DRAM cell

Details Method for fabricating a capactior in a DRAM cell Method for fabricating a capactior in a DRAM cell

1997-12-22

1999-01-12

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, H01L 218242

Patent

active

058588353

ABSTRACT:
A method for fabricating a capacitor over a semiconductor substrate is disclosed. The method includes the steps of: forming an insulating layer over the semiconductor substrate; forming a contact opening through the insulating layer to expose a portion of the semiconductor substrate; forming a first polysilicon layer over the insulating layer and filling in the contact opening to electrically contact the semiconductor substrate; patterning the first polysilicon layer to the insulating layer surface, thereby forming a trench for defining a capacitor region; forming a thin polysilicon layer with a rugged surface over the first polysilicon layer and the insulating layer; forming a mask layer over the thin polysilicon layer, wherein the mask layer has a smaller thickness in the trench bottom than in other regions; removing the mask layer in the trench bottom through an anisotropical etch step; removing the uncovered portions of the thin polysilicon layer to expose the insulating layer surface; removing the mask layer, thereby forming a storage electrode consisting of the thin polysilicon layer and the first polysilicon layer; forming a dielectric layer over the storage electrode and the exposed insulating layer; and forming a second polysilicon layer over the dielectric layer.

REFERENCES:
patent: 5554557 (1996-09-01), Koh
patent: 5622889 (1997-04-01), Yoo et al.

Affiliated with

Also associated with

Rating

Method for fabricating a capactior in a DRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a capactior in a DRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a capactior in a DRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1514986