Method for fabricating a capacitor in a semiconductor device

Details Method for fabricating a capacitor in a semiconductor device Method for fabricating a capacitor in a semiconductor device

1998-08-03

2000-11-14

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438643, 438644, 438653, 438654, H01L 218244, H01L 218242, H01L 2120, H01L 214763, H01L 2144

Patent

active

061469416

ABSTRACT:
A fabricating method of a capacitor includes two gates and a commonly used source/drain region formed on a substrate. Then, a process of sell align contact has been applied to make a pitted self align contact window (PSACW) to partly expose the commonly used source/drain region. Then an glue/barrier layer and a lower electrode of the capacitor are formed over the PSACW. Then a dielectric thin film with a material having high dielectric constant is formed over the lower electrode. Then, an upper electrode is formed over the dielectric thin film to complete a capacitor, which has a structure of metal insulator metal with a shape like the PSACW.

REFERENCES:
patent: 5686337 (1997-11-01), Koh et al.
patent: 5691219 (1997-11-01), Kawakubo et al.
patent: 5696017 (1997-12-01), Ueno
patent: 5741722 (1998-04-01), Lee
patent: 5972748 (1999-10-01), Itoh et al.
patent: 5990021 (1999-11-01), Prall et al.
patent: 6001660 (1999-12-01), Park et al.
Dutch Search Report No. 1009940, Dated: May 20, 1999.
French Search Report No. 9810690, Dated: Jun. 9, 1999.

Affiliated with

Also associated with

Rating

Method for fabricating a capacitor in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a capacitor in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a capacitor in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2064295