Method for etching silicon dioxide using fluorocarbon gas chemis

Details Method for etching silicon dioxide using fluorocarbon gas chemis Method for etching silicon dioxide using fluorocarbon gas chemis

1998-05-05

2000-09-12

Lund, Jeffrie R

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438723, 216 17, 216 67, 216 79, C03C 1500, C03C 2500, H01B 1300, H01L 21302

Patent

active

061177865

ABSTRACT:
A semiconductor manufacturing process wherein deep and narrow 0.6 micron and smaller openings are plasma etched in doped and undoped silicon oxide. The etching gas includes fluorocarbon, oxygen and nitrogen reactants which cooperate to etch the silicon oxide while providing enough polymer build-up to obtain anisotropically etched openings and avoid etch stop of etched openings having aspect ratios of 5:1 and higher. The process is useful for etching 0.25 micron and smaller contact or via openings and can be carried out in a parallel plate plasma reactor having a showerhead electrode.

REFERENCES:
patent: 5013398 (1991-05-01), Long et al.
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5021121 (1991-06-01), Groechel et al.
patent: 5022958 (1991-06-01), Favreau et al.
patent: 5254213 (1993-10-01), Tamaki
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5431778 (1995-07-01), Dahm et al.
patent: 5462896 (1995-10-01), Komura et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5611888 (1997-03-01), Bosch et al.
patent: 5736457 (1998-04-01), Zhao
patent: 5780338 (1998-07-01), Jeng et al.
Norstrom, H., et al., "RIE of SiO/sub 2/ in doped and undoped fluorocarbon plasmas", Database accession No. 2033212, vol. 32, No. 12, Dec. 1982, pp. 737-745, XP002110457.

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