Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-05-02
2006-05-02
Geyer, Scott (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S585000
Reexamination Certificate
active
07037857
ABSTRACT:
A method for forming trench isolation in an SOI substrate begins with a pad oxide followed by an antireflective coating (ARC) over the upper semiconductor layer of the SOI substrate. The pad oxide is kept to a thickness not greater than about 100 Angstroms. An opening is formed for the trench isolation that extends into the oxide below the upper semiconductor layer to expose a surface thereof. The pad oxide is recessed along its sidewall with an isotropic etch. This is followed by a thin, not greater than 50 Angstroms, oxide grown along the sidewall of the opening. This grown oxide avoids forming a recess between the ARC and the pad oxide and also avoids forming a void between the surface of the lower oxide layer and the grown oxide. This results in avoiding polysilicon stringers when the subsequent polysilicon gate layer is formed.
REFERENCES:
patent: 6524929 (2003-02-01), Xiang et al.
patent: 6534379 (2003-03-01), Fisher et al.
patent: 6833295 (2004-12-01), Kajita
patent: 2003/0181049 (2003-09-01), Huang et al.
Hall Mark D.
Jahanbani Mohamad
Turner Michael D.
Van Gompel Toni D.
Balconi-Lamica Michael J.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Geyer Scott
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