Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1990-04-24
1993-08-10
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430166, 430191, 430192, 430193, 430326, 156643, 156646, 156660, G03F 736, G03F 723, B44C 122
Patent
active
052347931
ABSTRACT:
A photolithographic method for structure generation in bilayer processes is provided. Pursuant to the method, a dimensional reserve is produced in a top resist structure by chemical treatment with a bulging agent. The expansion preferably is performed by treatment with an aqueous solution. The expansion can be set such that the dimensional loss to be anticipated in further etchings of the bottom resist or, respectively, of the wafer is exactly compensated for.
REFERENCES:
patent: 4552833 (1985-11-01), Ito et al.
patent: 4613398 (1986-09-01), Chiong et al.
patent: 4657845 (1987-04-01), Frechet et al.
patent: 4690838 (1987-09-01), Hiraoka et al.
patent: 4737425 (1988-04-01), Lin et al.
patent: 4782008 (1988-11-01), Babich et al.
patent: 4808511 (1989-02-01), Holmes
patent: 4931351 (1990-06-01), McColgin et al.
patent: 4999280 (1991-03-01), Hiraoka et al.
patent: 5173393 (1992-12-01), Sezi et al.
Sezi et al, Positive Near-UV Resist for Bilayer Lithography, SPIE, vol. 811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection (1987), 172-179.
Quantified Solvent Swelling of Polymer Films, IBM Technical Disclosure Bulletin, vol. 27, No. 12, May 1985, 7261-7262.
Alling et al, Image Reversal Photoresist, Solid State Technology/Jun. 1988, 37-38.
Fredericks et al, Deep UV Resists, IBM Technical Disclosure Bulletin, vol. 23, No. 9, Feb. 1981, 4132.
Contrast Enhancement of Resist Images by Surface Crosslinkage, IBM Technical Disclosure Bulletin, vol. 31, No, 3, Aug. 1988, 349.
Leonard et al, Automated In-Line Puddle Development of Positive Photoresists, Solid State Technology/Jun. 1981, 99-102.
Radiation-Curable Polysiloxanes, IBM Technical Disclosure Bulletin, vol. 30, No. 3, Aug. 1987, 1041-1042.
Reichmanis et al, Approaches to Resists for Two-Level RIE Pattern Transfer Applications, Solid State Technology/Aug. 1985, 130-135.
Tilenschi, Kriterien zur Beurteilung von Plasmaatszystemen, Productornic Apr. 1987, 66-69.
Ahne Hellmut
Birkle Siegfried
Leuschner Rainer
Sebald Michael
Sezi Recai
Bowers Jr. Charles L.
Chu John S.
Siemens Aktiengesellschaft
LandOfFree
Method for dimensionally accurate structure transfer in bilayer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for dimensionally accurate structure transfer in bilayer , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for dimensionally accurate structure transfer in bilayer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1724387