Method for depositing a very high phosphorus doped silicon...

Details Method for depositing a very high phosphorus doped silicon... Method for depositing a very high phosphorus doped silicon...

2005-05-17

2005-05-17

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S783000

Reexamination Certificate

active

06893983

ABSTRACT:
A thermal activated SACVD method for depositing a phosphorus oxide layer onto a silicon oxide wafer comprising the steps of: loading an SACVD device with a silicon oxide wafer; depositing a phosphorus doped oxide (PSG) layer on the USG layer using pure oxygen and a phosphorus and silicon source; purging the SACVD device; and depositing a boron and phosphorus doped oxide (BPSG) layer on the PSG layer.

REFERENCES:
patent: 5262336 (1993-11-01), Pike, Jr. et al.
patent: 5284800 (1994-02-01), Lien et al.
patent: 5494859 (1996-02-01), Kapoor
patent: 5527719 (1996-06-01), Park et al.
patent: 5814377 (1998-09-01), Robles et al.
patent: 5899725 (1999-05-01), Harshfield
patent: 6013584 (2000-01-01), M'Saad
patent: 6071771 (2000-06-01), Schuegraf
patent: 6090725 (2000-07-01), Yang et al.
patent: 6114216 (2000-09-01), Yieh et al.
patent: 6153540 (2000-11-01), Lou et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6169040 (2001-01-01), Mifuji et al.
patent: 6197689 (2001-03-01), Tabara
patent: 20030129826 (2003-07-01), Werkhoven et al.

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