Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-11-20
2007-11-20
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C257SE21540, C257SE21564, C257SE21545, C257SE21565, C438S294000
Reexamination Certificate
active
10874696
ABSTRACT:
A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film; and annealing the dielectric film in a low temperature oxygen-containing high density plasma. The resulting film has improved mechanical properties, including minimized seams, improved WERR, and low intrinsic stress, comparable to a high temperature annealing process (˜800° C.), but without exceeding the thermal budget limitations of advanced devices.
REFERENCES:
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5525550 (1996-06-01), Kato
patent: 5527561 (1996-06-01), Dobson
patent: 5597395 (1997-01-01), Bocko et al.
patent: 5705028 (1998-01-01), Matsumoto
patent: 5985770 (1999-11-01), Sandhu et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6064104 (2000-05-01), Omid-Zohoor et al.
patent: 6102993 (2000-08-01), Bhandari et al.
patent: 6133160 (2000-10-01), Komiyama et al.
patent: 6184108 (2001-02-01), Omid-Zohoor et al.
patent: 6184143 (2001-02-01), Ohashi et al.
patent: 6300219 (2001-10-01), Doan et al.
patent: 6316063 (2001-11-01), Andideh et al.
patent: 6335261 (2002-01-01), Natzle et al.
patent: 6352943 (2002-03-01), Maeda et al.
patent: 6352953 (2002-03-01), Seki et al.
patent: 6372669 (2002-04-01), Sandhu et al.
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6504233 (2003-01-01), Gorczyca et al.
patent: 6511399 (2003-01-01), Mc Collum Etchason et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6531377 (2003-03-01), Knorr et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6534802 (2003-03-01), Schuegraf
patent: 6540838 (2003-04-01), Sneh et al.
patent: 6551339 (2003-04-01), Gavronsky
patent: 6586349 (2003-07-01), Jeon et al.
patent: 6624091 (2003-09-01), Yuan
patent: 6780789 (2004-08-01), Yu et al.
patent: 6784101 (2004-08-01), Yu et al.
patent: 6802944 (2004-10-01), Ahmad et al.
patent: 6861334 (2005-03-01), Raaijmakers et al.
patent: 6867152 (2005-03-01), Hausmann et al.
patent: 6903005 (2005-06-01), Marsh
patent: 6908862 (2005-06-01), Li et al.
patent: 6949481 (2005-09-01), Halliyal et al.
patent: 6984591 (2006-01-01), Buchanan et al.
patent: 7097878 (2006-08-01), Rulkens et al.
patent: 7129189 (2006-10-01), Hausmann et al.
patent: 7148155 (2006-12-01), Tarafdar et al.
patent: 7163899 (2007-01-01), Cho et al.
patent: 7202185 (2007-04-01), Hausmann et al.
patent: 7223707 (2007-05-01), Papasouliotis et al.
patent: 2001/0049205 (2001-12-01), Sandhu et al.
patent: 2003/0015764 (2003-01-01), Raaijmakers et al.
patent: 2003/0092241 (2003-05-01), Doan et al.
patent: 2003/0129828 (2003-07-01), Cohen et al.
patent: 2003/0134741 (2003-07-01), Weisbeck et al.
patent: 2003/0157781 (2003-08-01), Macneil et al.
patent: 2004/0004247 (2004-01-01), Forbes et al.
patent: 2004/0025787 (2004-02-01), Selbrede et al.
patent: 2004/0043149 (2004-03-01), Gordon et al.
patent: 2004/0043569 (2004-03-01), Ahn et al.
patent: 2004/0044127 (2004-03-01), Okubo et al.
patent: 2004/0079728 (2004-04-01), Mungekar et al.
patent: 2004/0102031 (2004-05-01), Kloster et al.
patent: 2004/0203254 (2004-10-01), Conley et al.
patent: 2004/0206267 (2004-10-01), Sambasivan et al.
patent: 2004/0222490 (2004-11-01), Raaijmakers et al.
patent: 2004/0247787 (2004-12-01), Mackie et al.
patent: 2005/0054213 (2005-03-01), Derderian et al.
patent: 2005/0112282 (2005-05-01), Gordon et al.
patent: 2005/0239264 (2005-10-01), Jin et al.
patent: 2005/0271813 (2005-12-01), Kher et al.
patent: 2006/0038293 (2006-02-01), Rueger et al.
patent: 2006/0087000 (2006-04-01), Okuno
patent: 2006/0127578 (2006-06-01), Li et al.
patent: 5-308071 (1993-11-01), None
patent: 2004-256479 (2004-09-01), None
patent: WO02/27063 (2002-04-01), None
patent: WO03/083167 (2003-10-01), None
Dennis Michael Hausmann, “Atomic Layer Deposition of Metal Oxide Thin Films,” A thesis presented by, Harvard University, 186 pages, Jul. 2002.
Hausmann et al., “Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates,” Science, vol. 308, Oct. 2002, 5 Pages.
Gordon et al., “A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches”, Chemical Vapor.Deposition 2003, 9, No. 2, pp. 73-78.
Roland et al., “Theoretical Modeling of SiO2Photochemical Vapor Deposition and Comparison to Experimental Results for Three Oxidant Chemistries: SiH4+ O2, H2O/O2, and H2O2”, Chem Mater 2001, 13, 2501-2510.
Roland et al., “Low Temperature Photochemical Vapor Deposition of SiO2 Using 172 nm Xe2* Excimer Lamp Radiation with Three Oxidant Chemistries: O2, H2O/O2,and H202”, Chem Mater 2001, 13, 2493-2500.
Moore et al., “Reaction of hydrogen peroxide with organosilanes under chemical vapour depostion conditons”, J. Chem. Soc., Dalton Trans., 2000, 2673-2677.
Gaillard et al., “Effect of plasma and thermal annealing on chemical vapor deposition dielectrics grown using SIH4—H2O2gas mixtures”, J. Vac. Sci. Technol. A 15(5), Sep./Oct. 1997, pp. 2478-2484.
Taylor et al., “Studies on the reaction between silane and hydrogen peroxide vapour; surface formation of planarized silica layers”, J. Chem. Soc., Dalton Trans., 1997, pp. 1049-1053.
Xia et al., “High Aspect Ratio Trench Filling Using Two-Step Subatmospheric Chemical Vapor Deposited Borophosphosilicated Glass for <0.18 μm Device Application”, Journal of The Electrochemical Society, 146 (5) 1884-1888 (1999).
Xia et al., “High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicated Glass—A Solution for Next Generation Shallow Trench Isolation”, Journal of The Electrochemical Society, 146 (3) 1181-1185 (1999).
Arno et al., “Fourier Transform Infared Characterization of Downstream Gas-Phase Species Generated by Tetraethylorthosilicate/Ozone Atomospheric Pressure Reactions”, Journal of The Eletrochemical Society, 146 (1) 276-280 (1999).
Romet et al., “Modeling of Silicon Dioxide Chemical Vapor Deposition from Tetraethoxysilane and Ozone”, Journal of The Electrochemical Society, 148 (2) G82-G90 (2001).
Ikeda et al., “The Effects of Alkoxy Functional Groups on Atmospheric-Pressure Chemical Vapor Deposition Using Alkoxysilane and Ozone”, J. Electrochem. Soc., vol. 142, No. 5, May 1995, pp. 1659-1662.
“Customer A low k Gapfill Trikon FlowFill vs FHDP”, Novellus Systems, Inc., pp. 1-12.
Ritala et al., “Atomic Layer Deposition”, Handbook of Thin Films Materials, vol. 1, 2002, pp. 103-159.
Rulkens et al., “Methods for the Use of Alkoxysilanol Precursors for Vapor Deposition of SiO2Films”, Novellus Systems Inc., filed Dec. 23, 2004, U.S. Appl. No. 11/021,558, pp. 1-24.
Papasouliotis et al., “Dynamic Rapid Vapor Deposition Process for Conformal Silica Laminates”, Novellus Systems, Inc., filed Dec. 30, 2004, U.S. Appl. No. 11/027,480, pp. 1-29.
Papasouliotis et al., “Multi-Step Nanolaminate Dielectric Deposition and Etch Back Gap Fill Process”, Novellus Systems, Inc., filed Dec. 30, 2004, U.S. Appl. No. 11/026,563, pp. 1-28.
Rulkens et al., “Chamber and Chamber Surface Materials to Inhibit Deposition and Methods of Making Same”, Novellus Systems, Inc., filed Dec. 23, 2004, U.S. Appl. No. 11/027,388, pp. 1-26.
Papasouliotis et al., “Methods for Forming High Density, Conformal, Silica Nanolaminate Films Via Pulsed Deposition Layer In Structures of Confined Geometry”, Novellus Systems, Inc., filed Dec,. 30, 2004, U.S. Appl. No. 11/026,284, pp.
Hausmann Dennis M.
Nie Bunsen
Papasouliotis George D.
Rulkens Ron
Tarafdar Raihan M.
Beyer & Weaver, LLP
Coleman W. David
Kim Su C.
Novellus Systems Inc.
LandOfFree
Method for controlling properties of conformal silica... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for controlling properties of conformal silica..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling properties of conformal silica... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3835930