Semiconductor laser

Details Semiconductor laser Semiconductor laser

2007-11-20

2007-11-20

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S046010

Reexamination Certificate

active

11410057

ABSTRACT:
A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017cm−3or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.

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