Method for controlling dopant profiles and dopant activation...

Details Method for controlling dopant profiles and dopant activation... Method for controlling dopant profiles and dopant activation...

2005-05-10

2005-05-10

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S563000

Reexamination Certificate

active

06890825

ABSTRACT:
An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.

REFERENCES:
patent: 3950187 (1976-04-01), Kirkpatrick
patent: 4415372 (1983-11-01), Koshino et al.
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5750443 (1998-05-01), Sakamoto
patent: 6489225 (2002-12-01), Ross et al.
A.C. Greenwald, et al. “Pulsed-Electron-Beam Annealing of Ion-Implantation Damage”, Spire Corporation, Bedford, Massachusetts 01730 (Accepted for Publication Aug. 22, 1978), J. Appl. Phys. 50(2), Feb. 1979, 1979 American Institute of Physics, pp. 783-787.

Affiliated with

Also associated with

Rating

Method for controlling dopant profiles and dopant activation... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling dopant profiles and dopant activation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling dopant profiles and dopant activation... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3417409