Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-01
2008-04-01
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S287000, C438S591000
Reexamination Certificate
active
07351626
ABSTRACT:
A method for improving high-κ gate dielectric film (104) properties. The high-κ film (104) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (106) with low partial pressure of oxidizer to promote film relaxation and increase by-product diffusion and desorption. The second anneal is performed in an oxidizing ambient (108) with a low partial pressure of reducer to remove defects and impurities.
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Chambers James J.
Colombo Luigi
Rotondaro Antonio L. P.
Visokay Mark R.
Brady III W. James
Duong Khanh
Garner Jacqueline J.
Smith Zandra V.
Telecky , Jr. Frederick J.
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