Method for bilayer resist plasma etch

Details Method for bilayer resist plasma etch Method for bilayer resist plasma etch

2006-11-28

2006-11-28

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S736000

Reexamination Certificate

active

07141505

ABSTRACT:
A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4gas. Then the bilayer resist is etched.

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