Method for avoiding polysilicon film over etch abnormal

Details Method for avoiding polysilicon film over etch abnormal Method for avoiding polysilicon film over etch abnormal

2008-04-15

2008-04-15

Goudreau, George A (Department: 1792)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S680000, C438S714000, C134S001300

Reexamination Certificate

active

10690665

ABSTRACT:
The method for avoiding polysilicon film over etch abnormal includes cleaning a semiconductor substrate. A dielectric layer is formed on the substrate. Subsequently, a first silicon source gas at a first flow rate is next performed injecting into a reaction chamber to form a first polysilicon film over the dielectric layer. Successively, a second silicon source gas at a second flow rate is performed injecting into the reaction chamber to form a second polysilicon film over the first polysilicon film, wherein the second silicon source gas having a different growth rate than the first silicon source gas. A patterned photoresist layer is then formed on the second polysilicon film. After the patterned photoresist layer is formed, a dry etching process by way of using the patterned photoresist layer as a etching mask is performed to etch through in turn the second polysilicon film and the first polysilicon film till exposing to the dielectric layer. Finally, the photoresist layer is removed.

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