Method for anisotropically etching tungsten using SF.sub.6, CHF.

Details Method for anisotropically etching tungsten using SF.sub.6, CHF. Method for anisotropically etching tungsten using SF.sub.6, CHF.

1997-04-04

1999-02-02

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 216 75, 252 791, 438733, 438742, H01L 2100

Patent

active

058664831

ABSTRACT:
A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.

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