Method and system for reducing wafer edge tungsten residue...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S704000, C029S025010

Reexamination Certificate

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06881675

ABSTRACT:
A method and system for reducing wafer edge residue following a chemical mechanical polishing operation. A semiconductor wafer can be polished utilizing a chemical mechanical polishing apparatus. Thereafter, an acid etch operation may be performed to remove a residue, such as tungsten (W), collected on the semiconductor wafer as a result of the chemical mechanical polishing operation. A spin etch operation removes residue from the edges of the semiconductor wafer following chemical mechanical polishing of the semiconductor wafer.

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patent: 6589855 (2003-07-01), Miyamoto et al.
patent: 20010006246 (2001-07-01), Kwag et al.
patent: 20030186553 (2003-10-01), Bonsdorf et al.
patent: WO 0235598 (2002-05-01), None

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