Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-04-19
2005-04-19
Whitehead, Jr., Carl (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S704000, C029S025010
Reexamination Certificate
active
06881675
ABSTRACT:
A method and system for reducing wafer edge residue following a chemical mechanical polishing operation. A semiconductor wafer can be polished utilizing a chemical mechanical polishing apparatus. Thereafter, an acid etch operation may be performed to remove a residue, such as tungsten (W), collected on the semiconductor wafer as a result of the chemical mechanical polishing operation. A spin etch operation removes residue from the edges of the semiconductor wafer following chemical mechanical polishing of the semiconductor wafer.
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Chen Sheng-Wen
Huang Chen-Yi
Huang Chin-Te
Pan Jeng-Yang
Jr. Carl Whitehead
Peralta Ginette
Taiwan Semiconductor Manufacturing Co Ltd.
Tung & Associates
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