Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2007-01-16
2007-01-16
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S197000, C438S423000
Reexamination Certificate
active
10920990
ABSTRACT:
A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a nitrogen-containing gas, where the process gas pressure is selected to control the amount of neutral radicals relative to the amount of ionic radicals in the plasma, and modifying the gate dielectric stack by exposing the stack to the plasma.
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Colombo Luigi
Matsudo Tatsuo
Niimi Hiroaki
Shimomura Koji
Sugawara Takuya
Nhu David
Texas Instruments Inc.
Tokyo Electron Limited
Wood Herron & Evans LLP
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