Method and system for increasing tensile stress in a thin...

Details Method and system for increasing tensile stress in a thin... Method and system for increasing tensile stress in a thin...

2007-11-27

2007-11-27

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257S649000, C438S792000

Reexamination Certificate

active

11091755

ABSTRACT:
A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electro-magnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

REFERENCES:
patent: 5786276 (1998-07-01), Brooks et al.
patent: 6228563 (2001-05-01), Starov et al.
patent: 6429135 (2002-08-01), Chern et al.
patent: 6485599 (2002-11-01), Glownia et al.
patent: 2001/0014512 (2001-08-01), Lyons et al.
patent: 2004/0004708 (2004-01-01), Willis
patent: 2004/0063290 (2004-04-01), Jennings et al.
patent: 2005/0217799 (2005-10-01), O'Meara et al.
Goto, et al., Technology Booster using Strain-Enhancing Laminated SiN (SELS) for 65nm Node HP MPUs, IEEE International Electron Devices Meeting, San Francisco, CA, Dec. 13-15, 2004.
www.timedomaincvd.com, TimeDomain CVD, Inc., “Plasma-enhanced CVD of Silicon Nitride”, pp. 1-2, 2005.
Nowling, et al., “Remote plasma-enhanced chemical vapour deposition of silicon nitride at atmospheric pressure”, Plasma Sources Sci. Technol. 11 (2002), pp. 97-103, Feb. 4, 2002.
Akazawa, “Radiation effects in vacuum-ultraviolet-irradiated SiNx:H films,” Nuclear Instruments and Methods in Physics Research B, 116 (1996), pp. 355-359.
International Search Report for PCT/US06/05433, dated Sep. 18, 2007.

Affiliated with

Also associated with

Rating

Method and system for increasing tensile stress in a thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for increasing tensile stress in a thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for increasing tensile stress in a thin... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3875521