Method and system for improving critical dimension uniformity

Details Method and system for improving critical dimension uniformity Method and system for improving critical dimension uniformity

2007-04-04

2010-06-08

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S394000, C355S053000, C355S055000, C355S067000, C356S394000, C716S030000, C716S030000

Reexamination Certificate

active

07732109

ABSTRACT:
A method for improving critical dimension uniformity of a wafer includes exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits conditions of focus and exposure dose for each of the first plurality of substrates to form a plurality of perturbed wafers; measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers; averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map; measuring a sidewall angle of the plurality of mask patterns; averaging the sidewall angle measured to form a perturbed sidewall angle map; and providing the perturbed critical dimension map and the perturbed sidewall angle map to an exposure tool.

REFERENCES:
patent: 6869739 (2005-03-01), Ausschnitt et al.
patent: 7580129 (2009-08-01), Yu et al.
Hideki Ina et al., “Focus and Dose Measurement Method in Volume Production,” Japanese Journal of Applied Physics, vol. 44, No. 7B, 2005, pp. 5520-5525.

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