Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2011-03-15
2011-03-15
Souw, Bernard E (Department: 2881)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230FI, C250S425000, C427S469000, C204S192100, C204S192150
Reexamination Certificate
active
07905199
ABSTRACT:
A method for growing material on a substrate is described. The method comprises directionally growing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor for the thin film, wherein the growth occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and growth is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.
REFERENCES:
patent: 4361762 (1982-11-01), Douglas
patent: 4886971 (1989-12-01), Matsumura et al.
patent: 4916311 (1990-04-01), Fuzishita et al.
patent: 6218207 (2001-04-01), Itoh et al.
patent: 6613240 (2003-09-01), Skinner et al.
patent: 6797339 (2004-09-01), Akizuki et al.
patent: 7060989 (2006-06-01), Swenson et al.
patent: 7173252 (2007-02-01), Mack
patent: 7259036 (2007-08-01), Borland et al.
patent: 7301733 (2007-11-01), Fukuzawa et al.
patent: 7365341 (2008-04-01), Saito et al.
patent: 7626183 (2009-12-01), Wagner et al.
patent: 7642205 (2010-01-01), Timans
patent: 7794798 (2010-09-01), Hautala
patent: 2002/0014407 (2002-02-01), Allen et al.
patent: 2002/0130275 (2002-09-01), Mack et al.
patent: 2003/0073314 (2003-04-01), Skinner et al.
patent: 2004/0137158 (2004-07-01), Kools et al.
patent: 2006/0043317 (2006-03-01), Ono et al.
patent: 2006/0124934 (2006-06-01), Fukumiya et al.
patent: 2006/0278611 (2006-12-01), Sato et al.
patent: 2007/0077499 (2007-04-01), Ikuta et al.
patent: 2009/0071818 (2009-03-01), Fukumiya et al.
patent: 2009/0087578 (2009-04-01), Hautala
patent: 2009/0087579 (2009-04-01), Hautala
patent: 2009/0152629 (2009-06-01), Hu et al.
patent: 2009/0314954 (2009-12-01), Hautala et al.
patent: 2009/0317564 (2009-12-01), Hautala et al.
patent: 2010/0193898 (2010-08-01), Hautala et al.
patent: 2010/0200946 (2010-08-01), Hautala
patent: 2010/0227142 (2010-09-01), Hautala et al.
patent: 2850400 (2004-07-01), None
patent: 62296357 (1987-12-01), None
Isao Yamada et al., “Materials Processing by Gas Cluster Ion Beams”, Materials Science and Engineering Reports, vol. 34, Issue 6, pp. 231-295, Oct. 30, 2001 (ISSN 09S7-796X).
Saitoh, Y. et al., Acceleration of cluster and molecular ions by TIARA 3 MV tandem accelerator, vol. 452, No. 1-2, Sep. 21, 2000, pp. 61-66, XP004210610, ISSN: 0168-9002.
Yamada, I. et al., Surface modification with gas cluster ion beams, Nuclear Instruments & Methods in Physics Research, vol. B79, Nov. 2, 1992, pp. 233-226, XP001031961, ISSN: 0168-583X.
European Patent Office, International Search Report and Written Opinion issued in related International Application No. PCT/US2009/046417 dated Jan. 13, 2010, 18 pp.
Hautala, J., et al., “Infusion Processing: An Alternative to Plasma Technology for Semiconductor Device Manufacturing”, Proceedings of the Electrochemical Society, Symposium on ULSI Process Integration IV (Quebec PR, Canada, May 16-20, 2005), vol. 6, pp. 118-130.
Shao et al., “Nitrogen gas-cluster ion beam—A new nitrogen source for GaN growth”, Mat. Res. Soc. Symp. Proc., 2003, vol. 743, pp. 97-102.
Akizuki, M. et al., SiO2 Film Formation at Room Temperature by Gas Cluster Ion Beam Oxidation, Nuclear Instruments and Methods in Physics Research B 112 (1996) 83-85.
European Patent Office, Invitation to Pay Additional Fees in related International Application No. PCT/US2009/046417 dated Sep. 23, 2009, 5 pp.
Hautala John J.
Tabat Martin D.
Souw Bernard E
TEL Epion Inc.
Wood Herron & Evans LLP
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