Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-06
2005-12-06
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S683000
Reexamination Certificate
active
06972250
ABSTRACT:
A method (and structure) of forming a vertically-self-aligned silicide contact to an underlying SiGe layer, includes forming a layer of silicon of a first predetermined thickness on the SiGe layer and forming a layer of metal on the silicon layer, where the metal layer has a second predetermined thickness. A thermal annealing process at a predetermined temperature then forms a silicide of the silicon and metal, where the predetermined temperature is chosen to substantially preclude penetration of the silicide into the underlying SiGe layer.
REFERENCES:
patent: 5818100 (1998-10-01), Grider et al.
patent: 5955745 (1999-09-01), Yamazaki
patent: 6214679 (2001-04-01), Murthy et al.
patent: 6235568 (2001-05-01), Murthy et al.
Cabral, Jr. Cyril
Carruthers Roy A.
Chan Kevin K.
Chu Jack O.
Cohen Guy Moshe
Blum David S.
Salys, Esq. Casimer K.
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