Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-22
2005-03-22
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S263000, C438S216000, C438S287000, C438S288000, C438S258000, C257S324000, C257S173000, C257SE21423, C257SE29309, C257SE25024, C257S355000
Reexamination Certificate
active
06869844
ABSTRACT:
A structure for protecting an NROM from induced charge damage during device fabrication is described. The structure provides a discharge path for charge accumulated on the polygate layer during fabrication while providing sufficient isolation to ensure normal circuit operation.
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Liu Zhizheng
Wu Yider
Yang Jean Yee-Mei
Advanced Micro Device Inc.
Keshavan B. V.
Smith Matthew
Winstead Sechrest & Minick P.C.
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