Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-08-15
2011-11-08
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S241000, C438S257000, C438S278000, C438S300000, C257S213000, C257S288000, C257S292000, C257S306000, C257S321000, C257SE21645
Reexamination Certificate
active
08053317
ABSTRACT:
Method of forming a semiconductor device which includes the steps of obtaining a semiconductor substrate having a logic region and an STI region; sequentially depositing layers of high K material, metal gate, first silicon and hardmask; removing the hardmask and first silicon layers from the logic region; applying a second layer of silicon on the semiconductor substrate such that the logic region has layers of high K material, metal gate and second silicon and the STI region has layers of high K material, metal gate, first silicon, hardmask and second silicon. There may also be a second hardmask layer between the metal gate layer and the first silicon layer in the STI region. There may also be a hardmask layer between the metal gate layer and the first silicon layer in the STI region but no hardmask layer between the first and second layers of silicon in the STI region.
REFERENCES:
patent: 5465005 (1995-11-01), Eklund et al.
patent: 7112535 (2006-09-01), Coolbaugh et al.
patent: 7242072 (2007-07-01), Kothandaraman et al.
patent: 7288804 (2007-10-01), Booth, Jr. et al.
patent: 7334320 (2008-02-01), Voldman
patent: 2005/0104108 (2005-05-01), Hong
patent: 2007/0093015 (2007-04-01), Kudo et al.
patent: 2007/0096183 (2007-05-01), Ogawa et al.
patent: 2007/0215944 (2007-09-01), Komatsu
patent: 2008/0258232 (2008-10-01), Mizumura
Chakravarti Satya N.
Guo Dechao
Haensch Wilfried Ernst-August
Hon Wong Keith Kwong
Kulkarni Pranita
International Business Machines - Corporation
Law Offices of Ira D. Blecker, PC
Lee Kyoung
Richards N Drew
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