Method and structure for high performance phase change memory

Details Method and structure for high performance phase change memory Method and structure for high performance phase change memory

2007-05-22

2007-05-22

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S157000, C365S158000

Reexamination Certificate

active

11150188

ABSTRACT:
A method (and structure) for a memory cell having a phase change material (PCM) element and a heating element external to the PCM element. The heating element causes one of a presence of and an absence of a phase boundary within the PCM element for storing information in the PCM element.

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