Method and structure for high capacitance memory cells

Details Method and structure for high capacitance memory cells Method and structure for high capacitance memory cells

2005-08-09

2005-08-09

Nguyen, Cuong Q. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S398000

Reexamination Certificate

active

06927122

ABSTRACT:
A method and structure for high capacitance memory cells is provided. The method includes forming a trench capacitor in a semiconductor substrate. A self-structured mask is formed on the interior surface of the trench. The interior surface of the trench is etched to form an array of silicon pillars. The self-structured mask is removed. Then an insulator layer is formed on the array of silicon pillars. A polycrystalline semiconductor plate extends outwardly from the insulator layer in the trench.

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