Method and structure for buried circuits and devices

Details Method and structure for buried circuits and devices Method and structure for buried circuits and devices

2008-01-22

2008-01-22

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21412

Reexamination Certificate

active

07320918

ABSTRACT:
A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.

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