Method and driver for programming phase change memory cell

Details Method and driver for programming phase change memory cell Method and driver for programming phase change memory cell

2006-07-25

2006-07-25

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S113000, C365S148000, C257S002000, C257S052000

Reexamination Certificate

active

07082051

ABSTRACT:
In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.

REFERENCES:
patent: 6075719 (2000-06-01), Lowrey et al.
patent: 6487113 (2002-11-01), Park et al.
patent: 6570784 (2003-05-01), Lowrey
patent: 2003/0123277 (2003-07-01), Lowrey et al.
patent: 2004/0151023 (2004-08-01), Khouri et al.
patent: 2004/0246808 (2004-12-01), Cho et al.

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