4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Bulk effect device
  6. Bulk effect switching in amorphous material

Yong-ho Ha

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Method and driver for programming phase change memory cell

Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate

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Method and driver for programming phase change memory cell

Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method and driver for programming phase change memory cell

Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Phase changeable memory cells

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Phase changeable memory cells

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2846411

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