Method and compositions for hardening photoresist in etching...

Details Method and compositions for hardening photoresist in etching... Method and compositions for hardening photoresist in etching...

2005-08-02

2005-08-02

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains organic compound

C216S067000

Reexamination Certificate

active

06923920

ABSTRACT:
A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.

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International Search Report, dated Jan. 13, 2004.

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