Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-01-29
2008-01-29
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S689000, C216S088000, C216S089000, C252S079100, C451S041000, C451S036000
Reexamination Certificate
active
11196876
ABSTRACT:
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.
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Chen Liang-Yuh
Du Tianbao
Duboust Alain
Hsu Wei-Yung
Hu Yongqi
Angadi Maki
Applied Materials Inc.
Paterson & Sheridan
Vinh Lan
LandOfFree
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