Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-12
2010-12-28
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S276000, C438S513000, C257SE21196, C257SE21197, C250S492200, C250S492210
Reexamination Certificate
active
07858479
ABSTRACT:
An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
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Ito Hiroyuki
Jin Cheng-Guo
Kanada Hisataka
Mizuno Bunji
Nakayama Ichiro
Chang Leonard
Ghyka Alexander G
McDermott Will & Emery LLP
Panasonic Corporation
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