Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Formation of semi-insulative polycrystalline silicon
Reexamination Certificate
2007-09-04
2007-09-04
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Formation of semi-insulative polycrystalline silicon
C438S781000
Reexamination Certificate
active
10800377
ABSTRACT:
Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric matrix and further exposing the dielectric matrix to ultraviolet radiation to increase the mechanical strength of the dielectric matrix. Some methods involve activating a gas to create reactive gas species that can clean a reaction chamber. One disclosed apparatus includes an array of multiple ultraviolet sources that can be controlled such that different wavelengths of light can be used to irradiate a sample at a time.
REFERENCES:
patent: 4357451 (1982-11-01), McDaniel
patent: 4882008 (1989-11-01), Garza et al.
patent: 4885262 (1989-12-01), Ting et al.
patent: 5504042 (1996-04-01), Cho et al.
patent: 5686054 (1997-11-01), Barthel et al.
patent: 5700844 (1997-12-01), Hedrick et al.
patent: 5789027 (1998-08-01), Watkins et al.
patent: 5849640 (1998-12-01), Hsia et al.
patent: 5851715 (1998-12-01), Barthel et al.
patent: 5858457 (1999-01-01), Brinker et al.
patent: 5920790 (1999-07-01), Wetzel et al.
patent: 6140252 (2000-10-01), Cho et al.
patent: 6171661 (2001-01-01), Zheng et al.
patent: 6177329 (2001-01-01), Pang
patent: 6232658 (2001-05-01), Catabay et al.
patent: 6258735 (2001-07-01), Xia et al.
patent: 6268276 (2001-07-01), Chan et al.
patent: 6270846 (2001-08-01), Brinker et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6329017 (2001-12-01), Liu et al.
patent: 6329062 (2001-12-01), Gaynor
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6365266 (2002-04-01), MacDougall et al.
patent: 6383466 (2002-05-01), Domansky et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6386466 (2002-05-01), Ozawa et al.
patent: 6387453 (2002-05-01), Brinker et al.
patent: 6391932 (2002-05-01), Gore et al.
patent: 6392017 (2002-05-01), Chandrashekar
patent: 6420441 (2002-07-01), Allen et al.
patent: 6444715 (2002-09-01), Mukherjee et al.
patent: 6455417 (2002-09-01), Bao et al.
patent: 6479374 (2002-11-01), Ioka et al.
patent: 6500770 (2002-12-01), Cheng et al.
patent: 6548113 (2003-04-01), Birnbaum et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6576345 (2003-06-01), Cleemput et al.
patent: 6596467 (2003-07-01), Gallagher et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6610362 (2003-08-01), Towle
patent: 6632478 (2003-10-01), Gaillard et al.
patent: 6667147 (2003-12-01), Gallagher et al.
patent: 6677251 (2004-01-01), Lu et al.
patent: 6715498 (2004-04-01), Humayun et al.
patent: 6756085 (2004-06-01), Waldfried et al.
patent: 6797643 (2004-09-01), Rocha-Alvarez et al.
patent: 6805801 (2004-10-01), Humayun et al.
patent: 6812043 (2004-11-01), Bao et al.
patent: 6815373 (2004-11-01), Singh et al.
patent: 6831284 (2004-12-01), Demos et al.
patent: 6846380 (2005-01-01), Dickinson et al.
patent: 6848458 (2005-02-01), Shrinivasan et al.
patent: 6849549 (2005-02-01), Chiou et al.
patent: 6867086 (2005-03-01), Chen et al.
patent: 6903004 (2005-06-01), Spencer et al.
patent: 6914014 (2005-07-01), Li et al.
patent: 7018918 (2006-03-01), Kloster et al.
patent: 2002/0001973 (2002-01-01), Wu et al.
patent: 2002/0016085 (2002-02-01), Huang et al.
patent: 2002/0034626 (2002-03-01), Liu et al.
patent: 2002/0106500 (2002-08-01), Albano et al.
patent: 2002/0123240 (2002-09-01), Gallagher et al.
patent: 2002/0192980 (2002-12-01), Hogle et al.
patent: 2003/0064607 (2003-04-01), Leu et al.
patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: 2003/0157248 (2003-08-01), Watkins et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: 2004/0069410 (2004-04-01), Moghadam et al.
patent: 2004/0096586 (2004-05-01), Schulberg et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0099952 (2004-05-01), Goodner et al.
patent: 2004/0101633 (2004-05-01), Zheng et al.
patent: 2004/0102031 (2004-05-01), Kloster et al.
patent: 2004/0161532 (2004-08-01), Kloster et al.
patent: 2004/0170760 (2004-09-01), Meagley et al.
patent: 2004/0185679 (2004-09-01), Ott et al.
patent: 2005/0064698 (2005-03-01), Chang et al.
patent: WO95/07543 (1995-03-01), None
U.S. Office Action mailed Jul. 13, 2005, from U.S. Appl. No. 10/672,311.
U.S. Office Action Mailed Jul. 27, 2005, from U.S. Appl. No. 10/785,235.
U.S. Office Action mailed Dec. 27, 2005, from U.S. Appl. No. 10/789,103.
U.S. Office Action mailed Dec. 23, 2005, from U.S. Appl. No. 10/800,409.
U.S. Office Action mailed Feb. 7, 2006, from U.S. Appl. No. 10/672,305.
U.S. Office Action mailed Dec. 20, 2005, from U.S. Appl. No. 10/672,311.
U.S. Office Action mailed Dec. 20, 2005, from U.S. Appl. No. 10/849,568.
U.S. Office Action mailed Jan. 9, 2006, from U.S. Appl. No. 10/785,235.
Cho et al., “Method for Porogen Removal and Mechanical Strength Enhancement of Low-K Carbon Doped Silicon Oxide Using Low Thermal Budget Microwave Curing”, U.S. Appl. No. 11/280,113, filed Nov. 15, 2005.
Jan, C.H. et al,90NM Generation, 300mm Wafer Low k ILD/Cu Interconnect Technology, 2003 IEEE Interconnect Technology Conference.
Wu et al., U.S. Appl. No. 10/789,103, entitled: Methods For Producing Low-K CDO Films With Low Residual Stress.
Wu et al., U.S. Appl. No. 10/820,525, entitled: Methods For Producing Low-K CDO Films With Low Residual Stress.
Wu et al., U.S. Appl. No. 10/800,409, entitled: Methods For Producing Low-K CDO Films.
U.S. Appl. No. 10/016,017, File Date: Dec. 12, 2001.
U.S. Appl. No. 10/125,614, File Date: Apr. 18, 2002.
U.S. Appl. No. 10/202,987, File Date: Jul. 23, 2002.
Tipton et al., “Method for Removal of Porogens From Porous Low-K Films Using Supercritical Fluids”, Novellus Systems, Inc., U.S. Appl. No. 10/672,305, filed Sep. 26, 2003, pp. 1-32.
Humayun et al., “Methods For Forming Porous Films By Porogen Removal Combined With In Situ Modification”, U.S. Appl. No. 10/404,693, filed Mar. 31, 2003, Office Action dated Mar. 15, 2005.
Tipton et al., “Method Of Porogen Removal From Porous Low-K Films Using UV Radiation”, U.S. Appl. No. 10/672,311, filed Sep. 26, 2003, Office Action dated Sep. 7, 2004.
Tipton et al., “Method Of Porogen Removal From Porous Low-K Films Using UV Radiation”, U.S. Appl. No. 10/672,311, filed Sep. 26, 2003, Office Action dated Dec. 28, 2004.
Tipton et al., “Method For Removal Of Porogens From Porous Low-K Films Using Supercritical Fluids”, U.S. Appl. No. 10/672,305, Office Action dated Mar. 22, 2005.
R.D. Miller et al., “Phase-Seperated Inorganic-Organic Hybrids for Microelectronic Applications,” MRS Bulletin, Oct. 1997, pp. 44-48.
Jin et al., “Nanoporous Silica as an Ultralow-kDielectric,” MRS Bulletin, Oct. 1997, pp. 39-42.
Asoh et al., “Fabrication of Ideally Ordered Anodic Porous Alumina with 63 nm Hole Periodocity Using Sulfuric Acid,” J. Vac, Sci. Technol. B 19(2), Mar./Apr. 2001, pp. 569-572.
Asoh et al., “Conditions for Fabrication of Ideally Ordered Anodic Porous Alumina Using Pretextured AI,” Journal of the Electrochemica Society, 148 (4) B152-156 (2001) pp. B152-B156.
Holland et al., “Nonlithographic Techinique for the Production of Large Area High Density Gridded Field Sources,” J. Vac. Sci. Technol. B 17(2), Mar./Apr. 1999, pp. 580-582.
Masuda et al. “Highly Ordered Nanochannel-Array Architecture in Anodic Alumina,” Appl. Phys. Lett. 71(19), Nov. 1997, pp. 2770-2772.
Clube et al., White Paper from Holotronic Technologies SA; downloaded from www.hdotronic.com/whitepaper/fine-patt.pdf on Mar. 12, 2002.
Meli et al., “Self-Assembled Masks for the Transfer of Nanometer-Scale Patterns into Surfaces: Characterization by AFM and LFM”, Nano Letters, vol. 2, No. 2, 2002, 131-135.
“Shipley Claims Porous Low K Dielectric Breakthrough,” Press Release Mar. 17, 2003.
Jeffrey M. Calvert and Michael K. Gallagher, Semiconductor International, 26 (12), 56 (200
Cho Seon-Mee
Lu Brian G.
Mordo David
Srinivasan Easwar
Beyer & Weaver, LLP
Novellus Systems Inc.
Picardat Kevin M.
LandOfFree
Method and apparatus for UV exposure of low dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for UV exposure of low dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for UV exposure of low dielectric... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3779192