Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-09
2011-08-09
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000, C438S629000, C438S637000
Reexamination Certificate
active
07994002
ABSTRACT:
Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.
REFERENCES:
patent: 4784720 (1988-11-01), Douglas
patent: 4807016 (1989-02-01), Douglas
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5118384 (1992-06-01), Harmon et al.
patent: 5282925 (1994-02-01), Jeng et al.
patent: 5368897 (1994-11-01), Kurihara et al.
patent: 5505816 (1996-04-01), Barnes et al.
patent: 5578130 (1996-11-01), Hayashi et al.
patent: 5846375 (1998-12-01), Gilchrist et al.
patent: 5913132 (1999-06-01), Tsai
patent: 6054377 (2000-04-01), Filipiak et al.
patent: 6191002 (2001-02-01), Koyanagi
patent: 6271147 (2001-08-01), Tseng
patent: 6335261 (2002-01-01), Natzle et al.
patent: 6372657 (2002-04-01), Hineman et al.
patent: 6448537 (2002-09-01), Nering
patent: 6500728 (2002-12-01), Wang et al.
patent: 6506291 (2003-01-01), Tsai et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6670278 (2003-12-01), Li et al.
patent: 6960781 (2005-11-01), Currie et al.
patent: 7396480 (2008-07-01), Kao et al.
patent: 2001/0015261 (2001-08-01), Kobayashi et al.
patent: 2002/0137337 (2002-09-01), Lu et al.
patent: 2003/0173347 (2003-09-01), Guiver
patent: 2003/0227013 (2003-12-01), Currie et al.
patent: 2005/0205110 (2005-09-01), Kao et al.
patent: 2005/0230350 (2005-10-01), Kao et al.
patent: 2005/0266622 (2005-12-01), Arghavani et al.
patent: 2006/0051968 (2006-03-01), Joshi et al.
patent: 2006/0130971 (2006-06-01), Chang et al.
patent: 2006/0185592 (2006-08-01), Matsuura
patent: 2006/0223323 (2006-10-01), Chen et al.
patent: 2007/0087573 (2007-04-01), Chiang et al.
patent: 2007/0123051 (2007-05-01), Arghavani et al.
patent: 2008/0160210 (2008-07-01), Yang et al.
patent: 1822328 (2006-08-01), None
patent: 0376252 (1990-07-01), None
patent: 0658928 (1995-06-01), None
patent: 1099776 (2001-05-01), None
patent: 1568797 (2005-08-01), None
patent: 2000208498 (2000-07-01), None
patent: 2001053055 (2001-02-01), None
patent: 2003133284 (2003-05-01), None
patent: 100593740 (2006-03-01), None
EP Partial Search Report, Application No. 08150111.6-1235 / 1944796, dated Aug. 22, 2008.
H. Nishino, N. Hayasaka, and H. Okano, Damage-Free Selective Etching of SI Native Oxides Using NH3/NF3and SF6/H2O Down-Flow Etching, The Japanese Society of Applied Physics, vol. 74, No. 2, pp. 1345-1348, XP-002491959, Jul. 15, 1993.
International Search Report and Written Opinion dated Jun. 23, 2009 for International Application No. PCT/US2008/087436.
International Search Report and Written Opinion of the International Searching Authority mailed Jul. 3, 2008 (PCT/US05/46226).
Notification of First Office Action for Chinese Patent Application No. 2008100007537 dated Mar. 20, 2009.
Ogawa et al article, “Dry Cleaning Technology for Removal of Silicon Native Oxide Employing Hot NH3/NF3 Exposure,” Jpn J Appl Phys, vol. 41 (2002), pp. 5349-5358.
PCT International Search Report and Written Opinion dated Jun. 29, 2010 for International Application No. PCT/US2009/065208.
Chang Mei
Ge Zhenbin
Kao Chien-Teh
Lu Xinliang
Applied Materials Inc.
Booth Richard A.
Patterson & Sheridan L.L.P.
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