Method and apparatus for treating surface of semiconductor

Details Method and apparatus for treating surface of semiconductor Method and apparatus for treating surface of semiconductor

2005-02-01

2005-02-01

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S067000, C216S072000, C438S714000, C438S738000

Reexamination Certificate

active

06849191

ABSTRACT:
According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for continuously supplying an etching gas for plasma generation into the chamber; a plasma generator for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and a pulse modulator for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 μm or smaller is performed on the sample placed on the stage.

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