Method and apparatus for test and repair of marginally...

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital logic testing

Reexamination Certificate

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Details

C714S710000, C714S025000, C714S718000, C714S734000, C714S736000, C714S745000, C365S201000

Reexamination Certificate

active

10725668

ABSTRACT:
A method of manufacturing a device having embedded memory including a plurality of memory cells. During manufacturing test, a first test stress is applied to selected cells of the plurality of memory cells with a built-in self test. At least one weak memory cell is identified. The at least one weak memory cell is repaired. A second test stress is applied to the selected cells and the repaired cells with the built-in self test.

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patent: 2004/0062095 (2004-04-01), Templeton et al.
patent: WO 02/103522 (2002-12-01), None

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