Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-12-25
2007-12-25
Tran, Binh X. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S715000, C438S716000, C438S762000, C438S767000
Reexamination Certificate
active
10932633
ABSTRACT:
A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.
REFERENCES:
patent: 3854443 (1974-12-01), Baerg
patent: 3947236 (1976-03-01), Lasch, Jr.
patent: 4495024 (1985-01-01), Bok
patent: 4560590 (1985-12-01), Bok
patent: 4574093 (1986-03-01), Cox
patent: 4575408 (1986-03-01), Bok
patent: 4622918 (1986-11-01), Bok
patent: 4662987 (1987-05-01), Bok
patent: 4738748 (1988-04-01), Kisa
patent: 4860687 (1989-08-01), Frijlink
patent: 4903717 (1990-02-01), Sumnitsch
patent: 4903754 (1990-02-01), Hirscher et al.
patent: 4958061 (1990-09-01), Wakabayashi et al.
patent: 5033538 (1991-07-01), Wagner et al.
patent: 5090900 (1992-02-01), Rudolf et al.
patent: 5180000 (1993-01-01), Wagner et al.
patent: 5221403 (1993-06-01), Nozawa et al.
patent: 5318801 (1994-06-01), Snail et al.
patent: 5352294 (1994-10-01), White et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5382311 (1995-01-01), Ishikawa et al.
patent: 5431700 (1995-07-01), Sloan
patent: 5447431 (1995-09-01), Muka
patent: 5520538 (1996-05-01), Muka
patent: 5542559 (1996-08-01), Kawakami et al.
patent: 5574247 (1996-11-01), Nishitani et al.
patent: 5738165 (1998-04-01), Imai
patent: 5772770 (1998-06-01), Suda et al.
patent: 5778968 (1998-07-01), Hendrickson et al.
patent: 5891251 (1999-04-01), MacLeish et al.
patent: 6066204 (2000-05-01), Haven
patent: 6113703 (2000-09-01), Anderson et al.
patent: RE36957 (2000-11-01), Brors et al.
patent: 6613685 (2003-09-01), Granneman et al.
patent: 0 657 918 (1994-11-01), None
patent: 2 181 458 (1986-10-01), None
patent: 361294812 (1986-12-01), None
patent: 362021237 (1987-01-01), None
patent: 63136532 (1988-06-01), None
patent: 402034915 (1990-02-01), None
patent: 404078130 (1992-03-01), None
patent: 8103979 (1983-03-01), None
patent: 8200753 (1983-09-01), None
patent: 8203318 (1984-03-01), None
patent: 8402410 (1986-03-01), None
patent: WO 90/13687 (1990-11-01), None
patent: WO-95/16800 (1995-06-01), None
patent: WO-98/01890 (1998-01-01), None
Thermal Conductivity of Gas; Inorganic Compound (for argon and silane); Chemical Properties Handbook, (via www.knovel.com); 1999 McGraw-Hill.
As cited in the Int'l Search Report. Japan—Patent Abstracts of Japan; vol. 9, No. 85 (E-308), Apr. 13, 1984 & JP 59 2125718 A (Kokusai Denki KK) Dec. 5, 1984; Publication No. 59215718; Publication date May 12, 1984.
CRC Hand Book of Chemistry and Physics 3rdelectronic edition, CRC Press Inc. p;ublish 2000, p. 6-175.
Chemical Properties Handbook (access via www.knovel.com) McGraw-Hill Companies, 1999.
Yoo et al., “Low-temperature annealing system for 300 mm thermal processing,” Solid State Technology, Jun. 2001, pp. 152-160.
Granneman Ernst Hendrik August
Huussen Frank
ASM International N.V.
Knobbe Martens Olson & Bear LLP
Tran Binh X.
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