Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2007-09-18
2007-09-18
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S041000, C216S079000, C438S014000, C438S689000
Reexamination Certificate
active
11244335
ABSTRACT:
A method and apparatus are provided for simulating a standard wafer in semiconductor manufacturing equipment. The apparatus includes a support layer suitable for being handled by the semiconductor manufacturing equipment. Applied to the support layer is a mixture including a process agent and a material. During use, the present invention simulates a standard production wafer including material similar to that in the mixture of the present invention.
REFERENCES:
patent: 5521052 (1996-05-01), Rahman et al.
patent: 6081659 (2000-06-01), Garza et al.
Goldspring Gregory J.
O'Donnell Robert J.
Ahmed Shamim
Lam Research Corporation
Martine & Penilla & Gencarella LLP
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