Method and apparatus for shaping gas profile near bevel edge

Details Method and apparatus for shaping gas profile near bevel edge Method and apparatus for shaping gas profile near bevel edge

2011-07-19

2011-07-19

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S058000, C438S706000, C438S710000, C134S001100, C134S002000, C134S022180

Reexamination Certificate

active

07981307

ABSTRACT:
A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

REFERENCES:
patent: 5693241 (1997-12-01), Banks et al.
patent: 6004631 (1999-12-01), Mori
patent: 6020268 (2000-02-01), Cheng
patent: 2002/0007790 (2002-01-01), Park
patent: 2005/0173067 (2005-08-01), Lim

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