Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Ghyka, Alexander G (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S212000, C257S366000, C257S330000, C257S369000, C257S408000, C257SE21431, C257SE21432, C257SE21433, C257SE21507
Reexamination Certificate
active
07868386
ABSTRACT:
A semiconductor device with improved source/drain junctions and methods for fabricating the device are disclosed. A preferred embodiment comprises a MOS transistor with a gate structure overlying a substrate, lightly doped source/drain regions formed in the substrate aligned to the gate structure, sidewall spacers formed on the sidewalls of the gate structure and overlying the lightly doped source/drain regions, deeper source/drain diffusions formed into the substrate aligned to the sidewall spacers and additional pocket implants of source/drain dopants formed at the boundary of the deeper source/drain diffusions and the substrate. In a preferred method, the additional pocket implants are formed using an angled ion implant with the angle being between 4 and 45 degrees from vertical. Additional embodiments include recesses formed in the source/drain regions and methods for forming the recesses.
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Cheng Chung Long
Chuang Harry
Thei Kong-Beng
Ahmadi Mohsen
Ghyka Alexander G
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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