Method and apparatus for processing semiconductor substrates

Details Method and apparatus for processing semiconductor substrates Method and apparatus for processing semiconductor substrates

2007-09-25

2007-09-25

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C118S724000, C257SE21284, C438S773000

Reexamination Certificate

active

11049048

ABSTRACT:
Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.

REFERENCES:
patent: 5207573 (1993-05-01), Miyagi et al.
patent: 5330352 (1994-07-01), Watanabe et al.
patent: 5567149 (1996-10-01), Hansotte et al.
patent: 5662470 (1997-09-01), Huussen et al.
patent: 6164963 (2000-12-01), Weaver
patent: 6235121 (2001-05-01), Honma et al.
patent: 6316371 (2001-11-01), Oosterlaken et al.
patent: 6383927 (2002-05-01), Usami
patent: 6499768 (2002-12-01), De Ridder et al.
patent: 6503079 (2003-01-01), Kogano et al.
patent: 6709525 (2004-03-01), Song
patent: 6746240 (2004-06-01), De Ridder et al.
patent: 7067439 (2006-06-01), Metzner et al.
patent: 2004/0058560 (2004-03-01), Ranish et al.
patent: 2005/0016956 (2005-01-01), Liu et al.

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